Optical characteristics of photosensitive Ge-doped SiO2 planar waveguides implanted with protons at 800 degrees C

Authors
Hughes, PJ Knights, AP Weiss, BL Ojha, S
Citation
Pj. Hughes et al., Optical characteristics of photosensitive Ge-doped SiO2 planar waveguides implanted with protons at 800 degrees C, ELECTR LETT, 36(5), 2000, pp. 427-428
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
5
Year of publication
2000
Pages
427 - 428
Database
ISI
SICI code
0013-5194(20000302)36:5<427:OCOPGS>2.0.ZU;2-S
Abstract
An experimental study of the absorption, refractive index and UV photosensi tivity of proton implanted Ge-doped planar glass waveguides has shown that the defects induced by implantation at 800 degrees C were photobleached aft er UV exposure and that self-annealing occurred.