Room-temperature operation of index-guided 1.55 mu m InP-based vertical-cavity surface-emitting laser

Authors
Ortsiefer, M Shau, R Bohm, G Kohler, F Amann, MC
Citation
M. Ortsiefer et al., Room-temperature operation of index-guided 1.55 mu m InP-based vertical-cavity surface-emitting laser, ELECTR LETT, 36(5), 2000, pp. 437-439
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
5
Year of publication
2000
Pages
437 - 439
Database
ISI
SICI code
0013-5194(20000302)36:5<437:ROOI1M>2.0.ZU;2-3
Abstract
A novel concept for long-wavelength InP-based vertical cavity lasers (VCSEL s) with a buried tunnel junction enables effective electrical and optical c onfinement and yields low series resistance. VCSELs with aperture diameters of 13 mu m exhibit threshold currents of 10mA, singlemode emission, a quan tum efficiency of 10% and a threshold voltage of only 1.2V.