Broadband lumped HBT amplifiers

Authors
Krishnan, S Mensa, D Guthrie, J Jaganathan, S Mathew, T Girish, R Wei, Y Rodwell, MJW
Citation
S. Krishnan et al., Broadband lumped HBT amplifiers, ELECTR LETT, 36(5), 2000, pp. 466-467
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
5
Year of publication
2000
Pages
466 - 467
Database
ISI
SICI code
0013-5194(20000302)36:5<466:BLHA>2.0.ZU;2-7
Abstract
The authors report the realisation of wideband amplifiers using AlInAs/GaIn As transferred-substrate heterojunction bipolar transistors (HBTs). The fir st amplifier is in the f(tau) doubler configuration with an input emitter f ollow cr while the second is a Darlington state designed for high gain. The former had a low frequency gain of 8.2dB and a 3dB bandwidth of 80GHz, whi le the latter had a low frequency gain of 18dB and a bandwidth of 50GHz.