Ce3+ luminescent centres in atomic layer epitaxy SrS thin film electroluminescent devices

Citation
P. Benalloul et al., Ce3+ luminescent centres in atomic layer epitaxy SrS thin film electroluminescent devices, EPJ-APPL PH, 9(1), 2000, pp. 19-24
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
ISSN journal
12860042 → ACNP
Volume
9
Issue
1
Year of publication
2000
Pages
19 - 24
Database
ISI
SICI code
1286-0042(200001)9:1<19:CLCIAL>2.0.ZU;2-C
Abstract
A luminescent study under selective photonic excitation has established the presence of three different kinds of Ce3+ centres in SrS atomic layer epit axy thin films: one in a regular sulfur octahedral sites and two others in lower symmetry. These last sites shift the emission spectra towards the gre en. High thermal annealing up to 750 degrees C improves the crystallinity o f the SrS:Ce layer by converting low symmetry Ce3+ sites in regular octahed ral sites and decreasing the density of defects. These two effects lead to efficient PL layers with a good blue chromaticity.