Extended generation profile - EBIC model application in the case of a PN junction

We have developed a model for the calculation of the induced current due to an electron beam with an extended generation profile. Added to the absorbe d and diffuse electrons in the depth distribution. the generation profile t akes into account the lateral diffusion. The analytical expression of the e lectron beam induced current (EBIC) is obtained by solving the continuity e quation in permanent regime by the Green function method. The induced curre nt profile, obtained in the case of a ternary component (Ga0.7Al0.3As:N+/Ga 0.7Al0.3As:P) sulfur doped and prepared by organometallic compounds phase v apor epitaxy method, is compared to the theoretical profiles whose analytic al expressions are given by Van Roosbroeck and Bresse. The experimental cur rent profile, measured by S.E.M provided us to calculate the diffusion leng th of the minority carriers: L-p = 1 mu m in the N region and L-n = 1.80 mu m in the P region of the ternaire component. The theoretical curve obtaine d from the proposed model is in good agreement with the experimental one fo r a surface recombination velocity of 10(6) cm s(-1). Our results are found to be consistent compared to those obtained by other experimental techniqu es using the same samples.