MEAN CURRENT OF MICROWAVE-DRIVEN ULTRASMALL CAPACITANCE DOUBLE-JUNCTIONS WITH EXTERNAL ELECTROMAGNETIC ENVIRONMENT

The effect of high-frequency microwave irradiation on single-electron tunneling through voltage-biased ultrasmall normal conducting double-j unctions embedded in an external electromagnetic environment is invest igated. A stationary master equation for the stationary part of the oc cupation probability of the island electrode has been derived. The tim e-averaged mean current has been calculated in detail for T = 0 in the presence of a high-resistance environment. It is shown that there is a lifting of the resulting [I]-V characteristics compared with the res ults known from constant-voltage-driven junctions.