The adsorption of ethanol-d(0), -d(3), and -d(6) on Si(100) has been s
tudied in the mid- to far-infrared region using surface infrared absor
ption spectroscopy. The acquisition of infrared spectra in this freque
ncy range ( < 1450 cm(-1)) is made possible by using specially prepare
d Si(100) wafers which have a buried metallic CoSi2 layer that acts as
an internal mirror. We find that ethanol dissociatively adsorbs acros
s the Si(100) dimers near room temperature to form surface bound hydro
gen and ethoxy groups. Furthermore, the ethoxy groups are oriented suc
h that the C-3 upsilon axis of the methyl group is nearly perpendicula
r to the surface, unlike the case for ethoxy groups bound to metal sur
faces. This adsorption geometry is deduced on the basis of the surface
dipole selection rule, which applies to these Si(100) samples with a
buried CoSi2 layer. Ab initio cluster calculations using gradient-corr
ected density functional methods confirm the proposed adsorption geome
try for ethoxy on Si(100) and accurately reproduce the observed normal
mode frequencies; (C) 1997 American Institute of Physics.