2-D-3-D crossover in single asymmetric quantum wells: Investigation of theelectric field and temperature effects

The 2-D-3-D crossover in n-doped GaAs-Ga-0.63 Al(0.37)AS Single asymmetric quantum wells is theoretically investigated. The coupled one-dimensional Sc hrodinger and Poisson equations are solved self-consistently, in the frame of the finite-difference method. The present study shows that the 2-D-3-D c rossover depends upon the geometrical parameters, as for instance, the quan tum well width and spacer layer width. It also depends on the temperature a nd the gate voltage applied on an asymmetric quantum-well-based device. The 2-D-3-D crossover diagrams involving the well width dependence of both the electric field and the temperature are presented and discussed.