A simplified broad-band large-signal nonquasi-static table-based FET model

In this paper, a simplified nonquasi-static table-based approach is develop ed for high-frequency broad-band large-signal field-effect-transistor model ing. As well as low-frequency dispersion, the quadratic frequency dependenc y of the y-parameters at high frequencies is taken into account through the use of linear delays, This model is suitable for applications related with nonlinear microwave computer-aided design and can be both easily extracted from de and s-parameter measurements and implemented in commercially avail able simulation tools. Model formulation, small-signal, and large-signal va lidation will be described in this paper, Excellent results are obtained fr om de up to the device f(T) frequencies, even when f(T) is as high as 100 G Hz.