Effect of Mg ion implantation on electrical properties of CuInSe2 thin films

The effects of Mg ion implantation on the electrical properties of CuInSe2 epitaxial thin films have been investigated. The implantation was carried o ut using the multienergy implantation technique to obtain a constant profil e of the Mg concentration along the depth direction. After implantation, th e layer was annealed at 400 degrees C in N-2 atmosphere for 60 min. From th e results of reflection high-energy electron diffraction, it was confirmed that the damages due to ion implantation were removed by the thermal anneal ing. The conductivity type in all implanted films was n type, and the carri er concentration was increased with increasing Mg concentration in the film s. Consequently, it is concluded that the Mg atom acts as a donor in CuInSe 2. (C) 2000 American Institute of Physics. [S0021-8979(00)00707-6].