Electron correlation effects on tunneling through a two-level quantum dot

Citation
Ev. Anda et al., Electron correlation effects on tunneling through a two-level quantum dot, J APPL PHYS, 87(7), 2000, pp. 3370-3374
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
7
Year of publication
2000
Pages
3370 - 3374
Database
ISI
SICI code
0021-8979(20000401)87:7<3370:ECEOTT>2.0.ZU;2-B
Abstract
The possibility of detection of the Kondo effect by means of the measuremen t of Bohm-Aharonov oscillations of the current going through a quantum dot embedded in one of the arms of a mesoscopic ring connected to two leads is demonstrated. The ring is threaded by a magnetic flux and the dot is subjec ted to a gate voltage V-0 which controls its charge content. Whenever the d ot has an odd number of electrons and, as a consequence, a net spin the sys tem is in the Kondo regime. Thus, the Kondo effect can be turned on and off as the two dot levels and their associate Coulomb blockade peaks are tuned to the Fermi level by changing V-0. Since the Kondo resonance provides a n ew channel for the electrons to tunnel through the dot it allows the flowin g of current along the arm of the ring which contains the dot even though t he dot levels are out of resonance. The interference between the waves goin g along the upper and lower arms of the ring gives rise to the Bohm-Aharono v oscillations of the current and is a clear sign of the Kondo effect. (C) 2000 American Institute of Physics. [S0021-8979(00)05005-2].