Flicker noise properties of organic thin-film transistors

The low frequency noise properties of organic thin film transistors are stu died here as a function of frequency and bias. Various n-channel and p-chan nel devices were evaluated and found to exhibit 1/f-type of noise in the 1 Hz-10 kHz range. The drain current noise is found to vary proportionally wi th drain current. The noise level is comparable to that found in Si metal-o xide-semiconductor field-effect transistors within the operation region of the devices, owing to the smaller drain currents in organic transistors, al though the intrinsic noise is considerably higher in the organic transistor s. The viability of using the organic materials in low noise circuits is de monstrated by a ring oscillator. (C) 2000 American Institute of Physics. [S 0021-8979(00)04007-X].