Analysis of grown-in defects in Czochralski Si

Octahedral void defects are widely recognized to be a cause of crystal-orig inated particles, flow-pattern defects, laser-scattering tomography defects , and oxide defects. Their structure has been characterized in detail and t he dependence of their generation on Si growth conditions has been extensiv ely examined. Void defects have been a major theme in the Si micro-device i ndustry for several years and many unsolved problems still remain. This pap er reviews this important field, and also presents some recent experimental results on void defects that we have obtained. (C) 2000 Elsevier Science B .V. All rights reserved.