Life cycle of grown-in defects in silicon as observed by IR-LST

We review defect studies in as-grown and processed silicon wafers performed by the authors. These have resulted in improved understanding of substrate -related defect formation, from nucleation during the pulling process throu gh to evolution during subsequent device processing. We summarize our resul ts on the impact of crystal pulling conditions on grown-in oxide precipitat e nuclei size/density distributions, and on the transformation of D-defects into oxide particles during high-temperature anneals. Finally, the effects of vacancy and oxygen outdiffusion on denuded zone formation and on the gr own-in precipitate nuclei in the near-surface region of silicon wafers are compared. On several occasions, we also illustrate how the improved underst anding of defect nucleation and transformation can be used to improve wafer quality and device yield. (C) 2000 Elsevier Science B.V. All rights reserv ed.