Characterization of grown-in stacking faults and dislocations in CZ-Si crystals by bright field IR laser interferometer

The grown-in defects in CZ-Si crystals grown at the rate of 0.4 mm/min was investigated by bright field IR laser interferometer and TEM. We have revea led that the defect is composed of the stacking fault and perfect dislocati ons. The stacking fault was extrinsic Frank partial type and the ends of th e perfect dislocations were contacting the edge of stacking fault. From the observation, we concluded that the stacking fault was formed by the agglom eration of self-interstitial atoms during crystal growth. The dislocations are considered to be generated from the edge of stacking fault. The cumulat ive interstitial concentration which contributes to the formation of stacki ng faults was estimated to be in the order of 10(13)/cm(3) from the size an d volume density of the stacking faults. (C) 2000 Elsevier Science B.V. All rights reserved.