M. Herms et al., Residual strain in annealed GaAs single-crystal wafers as determined by scanning infrared polariscopy, X-ray diffraction and topography, J CRYST GR, 210(1-3), 2000, pp. 172-176
We have compared the strain data in GaAs wafers, as-grown as well as anneal
ed, determined by means of the scanning infrared polariscope (SIRP) with da
ta of high-resolution X-ray diffraction (HRXD) and qualitative results of a
synchrotron based, single-crystal X-ray transmission topography (SXRTT) st
udy. The in-plane strain component \epsilon(r) - epsilon(t)\ measured by SI
RP throughout the wafer thickness was about 10(-5), while it derived from t
he single components epsilon(xx), epsilon(yy), and epsilon(xy) determined b
y HRXD at a penetrated layer close to the surface was above 10(-4). Consequ
ently, we assume that a strong strain gradient exists between the surface a
nd the bulk. (C) 2000 Published by Elsevier Science B.V. All rights reserve
d.