Electron beam induced current, cathodoluminescence and scanning photoluminescence study of GaN layers

Authors
Avella, M de la Puente, E Jimenez, J Castaldini, A Cavallini, A Polenta, L
Citation
M. Avella et al., Electron beam induced current, cathodoluminescence and scanning photoluminescence study of GaN layers, J CRYST GR, 210(1-3), 2000, pp. 220-225
Citations number
9
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
210
Issue
1-3
Year of publication
2000
Pages
220 - 225
Database
ISI
SICI code
0022-0248(200003)210:1-3<220:EBICCA>2.0.ZU;2-7
Abstract
Hydride vapor phase epitaxy GaN layers were studied by electron beam induce d current (EBIC), cathodoluminescence (CL) and scanning photoluminescence ( SPL). Both blue and yellow luminescence distributions were studied, showing spatial correlation. CL and EBIC images revealed a granular structure with grain sizes around 1 mu m. The minority carrier diffusion length was measu red obtaining values around 0.5-0.8 mu m, which were correlated to the size of the bright grains observed in EBIC and CL images. (C) 2000 Elsevier Sci ence B.V. All rights reserved.