Photocatalytic TiO2 deposition by chemical vapor deposition

Citation
D. Byun et al., Photocatalytic TiO2 deposition by chemical vapor deposition, J HAZARD M, 73(2), 2000, pp. 199-206
Citations number
19
Categorie Soggetti
Environmental Engineering & Energy
Journal title
JOURNAL OF HAZARDOUS MATERIALS
ISSN journal
03043894 → ACNP
Volume
73
Issue
2
Year of publication
2000
Pages
199 - 206
Database
ISI
SICI code
0304-3894(20000403)73:2<199:PTDBCV>2.0.ZU;2-H
Abstract
Dip-coating, spray-coating or spin-coating methods for crystalline thin fil m deposition require post-annealing process at high temperature. Since chem ical vapor deposition (CVD) process is capable of depositing high-quality t hin films without post-annealing process for crystallization, CVD method wa s employed for the deposition of TiO2 films on window glass substrates. Pos t-annealing at high temperature required for other deposition methods cause s sodium ion diffusion into TiO2 film from window glass, resulting in the d egradation of photocatalytic efficiency. Anatase-structured TiO2 thin films were deposited on window glass by CVD, and the photocatalytic dissociation rates of benzene with CVD-grown TiO2 under UV exposure were characterized. As the TiO2 film deposition temperature was increased, the (112)-preferred orientations were observed in the film. The (112)-preferred orientation of TiO2 thin film resulted in a columnar structure with a larger surface area for benzene dissociation. Obviously, benzene dissociation rate was maximum when the degree of the (112) preferential orientation was maximum. It is c lear that the thin film TiO2 should be controlled to exhibit the preferred orientation for the optimum photocatalytic reaction rate. CVD method is an alternative for the deposition of photocatalytic TiO2. (C) 2000 Elsevier Sc ience B.V. All rights reserved.