Dj. Yeon et al., Electrical characteristics of the MOD-derived SrBi2xTa2O9 and SrBi2.4(Ta,Nb)(2)O-9 thin films, J MATER SCI, 35(10), 2000, pp. 2405-2411
Ferroelectric and leakage current characteristics of the MOD-derived SrBi2x
Ta2O9 (0.8 less than or equal to x less than or equal to 1.6) and SrBi2.4(T
a1-yNby) O-2(9) (0 less than or equal to y less than or equal to 1) thin fi
lms were investigated. The SBT and SBTN films were fully crystallized to Bi
-layered perovskite structure by annealing at 800 degrees C for 1 hour in o
xygen atmosphere. The ferroelectric characteristics of the SBT films were o
ptimized at the Bi/Ta mole ratio x of 1.2. The leakage current density of t
he Bi-excess SBT films decreased remarkably by the post-metallization annea
ling at 800 degrees C for 10 minutes in oxygen ambient. The ferroelectric c
haracteristics of the SBTN films were optimized with the SBN content y of 0
.25. The SrBi2.4(Ta0.75Nb0.25) O-2(9) film exhibited 2P(r) and E-c of 19.04
mu C/cm(2) and 24.94 kV/cm at +/- 5 V, which were superior to 2P(r) of 11.
3 mu C/cm(2) and E-c of 39.6 kV/cm obtained for the SrBi2.4Ta2O9 film after
the post-metallization annealing. The MOD-derived SrBi2.4(Ta0.75Nb0.25)(2)
O-9 film did not exhibit the polarization fatigue after 10(11) switching cy
cles at +/- 5 V. (C) 2000 Kluwer Academic Publishers.