The micromachined piezoresistive accelerometer is now 20 years old. Design
variations have been investigated, but commercial devices have generally ma
intained a consistent topology with incremental improvements. In this paper
, a new approach is introduced to the design and construction of this devic
e that offers functional and manufacturing advantages. Piezoresistive accel
erometers are described that combine deep reactive ion etching and oblique
ion implantation to form self-caging proof masses and flexures with vertica
l sidewalls and sidewall piezoresistive strain sensors. These devices defle
ct in-plane rather than out-of-plane, which allows one to form multiaxis ac
celerometers on one substrate. Performance is comparable to inexpensive com
mercial capacitive accelerometers and is limited by 1/f noise. The design,
fabrication, and experimental characterization is presented. This new topol
ogy provides the foundation for a new category of piezoresistive accelerome
ters. [438].