Optical investigation of a-GaxSe100-x thin films

Authors
Ilyas, M Zulfequar, M Husain, M
Citation
M. Ilyas et al., Optical investigation of a-GaxSe100-x thin films, J MOD OPT, 47(4), 2000, pp. 663-675
Citations number
46
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
JOURNAL OF MODERN OPTICS
ISSN journal
09500340 → ACNP
Volume
47
Issue
4
Year of publication
2000
Pages
663 - 675
Database
ISI
SICI code
0950-0340(20000320)47:4<663:OIOATF>2.0.ZU;2-8
Abstract
The optical band gap and optical constants have been studied as a function of photon energy for a-GaxSe100-x thin films (where x = 0. 2.5, 5.0, 7.5 an d 10.0) in the wavelength region 450-1000nm. The optical band gap decreases with the increase of Ga concentration in the a-GaxSe100-x system. The refr active index (n) decreases while the extinction coefficient (k) increases w ith increasing photon energy. The results are interpreted in terms of conce ntration of localized states.