Optical and electrical properties of Pbs plus In thin films subjected to thermal processing

Indium thin film (similar to 20 nm) deposited on intrinsic lead sulfide fil ms leads to the formation of an n-type composite layer when annealed in nit rogen atmosphere at 350-400 degrees C, The formation of metallic lead and i ndium oxide is observed in the X-ray diffraction patterns of the films. The dark conductivity of the PbS + In films after nitrogen annealing at 400 de grees C attains a value of 500 Omega(-1) cm(-1), which is higher by five or ders of magnitude compared with as-prepared PbS films. Modifications in the optical and electrical properties of PbS + In films after annealing are at tributed to the presence of metallic lead and indium oxide in the films. (C ) 2000 Elsevier Science Ltd. All rights reserved.