We have measured the energy- and momentum-resolved band structure, and grou
nd state of occupation of the bands, for a crystalline silicon sample along
the ( 100) and ( 110) directions. Band structures were determined directly
by the technique of electron momentum spectroscopy (EMS) for a self-suppor
ting Si membrane with a thickness of approximately 7 nm. We compare our exp
erimental results with nb initio calculations for bulk crystalline silicon
performed within the linear muffin tin orbital approximation. Qualitative a
greement is seen between experiment and theory for the main valence band pe
ak. Additional intensity is observed in the measurement on either side of t
he main peak and is attributed mainly to multiple-scattering events. Satell
ite structure could also be present in these additional features, although
there is no direct evidence for this.