V. Craciun et al., Epitaxial ZnO films grown on sapphire (001) by ultraviolet-assisted pulsedlaser deposition, J ELCHEM SO, 147(3), 2000, pp. 1077-1079
ZnO thin films were grown on Si(100) and sapphire (001) substrates by an in
situ ultraviolet-assisted pulsed laser deposition technique. Using this te
chnique, highly textured ZnO films were grown on Si substrates even at 100
degrees C. Films grown on sapphire (001) at temperatures higher than 400 de
grees C, were found to be epitaxial by Rutherford backscattering (RBS) and
X-ray pole figure measurements, with [001](ZnO) parallel to [001](sap) and
[100](ZnO) parallel to [110](sap). The minimum yield of the channeling RES
spectra recorded from films deposited at 550 degrees C was around 2%, while
the full width at half maximum of the rocking curve on the (002) diffracti
on peak was only 0.168 degrees. Such values, characteristic for high qualit
y epitaxial ZnO films, are identical with those previously reported for fil
ms grown by conventional pulsed laser deposition at 750-800 degrees C subst
rate temperatures. (C) 2000 The Electrochemical Society. S0013-4651(99)09-0
23-0. All rights reserved.