Epitaxial ZnO films grown on sapphire (001) by ultraviolet-assisted pulsedlaser deposition

Citation
V. Craciun et al., Epitaxial ZnO films grown on sapphire (001) by ultraviolet-assisted pulsedlaser deposition, J ELCHEM SO, 147(3), 2000, pp. 1077-1079
Citations number
18
Categorie Soggetti
Physical Chemistry/Chemical Physics","Material Science & Engineering
Journal title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
ISSN journal
00134651 → ACNP
Volume
147
Issue
3
Year of publication
2000
Pages
1077 - 1079
Database
ISI
SICI code
0013-4651(200003)147:3<1077:EZFGOS>2.0.ZU;2-I
Abstract
ZnO thin films were grown on Si(100) and sapphire (001) substrates by an in situ ultraviolet-assisted pulsed laser deposition technique. Using this te chnique, highly textured ZnO films were grown on Si substrates even at 100 degrees C. Films grown on sapphire (001) at temperatures higher than 400 de grees C, were found to be epitaxial by Rutherford backscattering (RBS) and X-ray pole figure measurements, with [001](ZnO) parallel to [001](sap) and [100](ZnO) parallel to [110](sap). The minimum yield of the channeling RES spectra recorded from films deposited at 550 degrees C was around 2%, while the full width at half maximum of the rocking curve on the (002) diffracti on peak was only 0.168 degrees. Such values, characteristic for high qualit y epitaxial ZnO films, are identical with those previously reported for fil ms grown by conventional pulsed laser deposition at 750-800 degrees C subst rate temperatures. (C) 2000 The Electrochemical Society. S0013-4651(99)09-0 23-0. All rights reserved.