Evaluation of C4F8O as an alternative plasma-enhanced chemical vapor deposition chamber clean chemistry

The perfluorinated ether, C4F8O, has been investigated as an alternative to C2F6 and C3F8 to reduce global warming emissions from plasma-enhanced chem ical vapor deposition (PECVD) chamber cleaning processes. A designed experi ment was completed with C4F8O evaluating the effect of gas flow rate, oxyge n dilution ratio, and chamber pressure on chamber clean time and global war ming emissions. Analysis was completed using response surface methodology a nd neural network modeling. The results were compared to chamber clean time s and emissions from typical C2F6 and C3F8 processes released for the react or, a Novellus Concept One 200 dielectric PECVD tool. Following the designe d experiment, additional data were gathered to examine the effect of radio frequency power and further variations in the other three variables on the process. Results indicate that when compared to C2F6 and C3F8 processes, sh orter chamber clean times in combination with a significant reduction in gl obal warming emissions are possible using the C4F8O chemistry. (C) 2000 The Electrochemical Society. S0013-4651(99)06-011-5. All rights reserved.