Wide band gap amorphous hydrogenated carbon films grown by plasma enhancedchemical vapor deposition

Citation
A. Convertino et al., Wide band gap amorphous hydrogenated carbon films grown by plasma enhancedchemical vapor deposition, J VAC SCI A, 18(2), 2000, pp. 356-360
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
18
Issue
2
Year of publication
2000
Pages
356 - 360
Database
ISI
SICI code
0734-2101(200003/04)18:2<356:WBGAHC>2.0.ZU;2-3
Abstract
We have fabricated amorphous hydrogenated carbon films by rf plasma enhance d chemical vapor deposition with very low ion bombardment energy. We demons trate that the optical gap of the films can be tuned in a wide range, from 3.46 up to 4.95 eV, i.e., close to the diamond gap (5.5 eV), by proper cont rol of the negative de self-bias voltage. This behavior suggests that a dra matic reduction in the content and clustering of the sp(2) sites occurs by lowering the ion bombardment energy. (C) 2000 American Vacuum Society. [S07 34-2101(00)01202-1].