Compounds of the CdTe-In2Te3 system in CdTe-In film grown by the close-spaced vapor transport technique combined with free evaporation

Polycrystalline thin films of CdTe-In were grown by the close-spaced vapor transport technique combined with free evaporation of In. The indium concen tration in the samples increased according to the rise in temperature of th e In source. X-ray diffraction analysis allowed us to identify the CdTe (or ) phase in all samples, together with the CdIn2Te4 (beta) phase in the samp les grown at the highest temperatures of the In source. Auger electron spec troscopy was used to quantify the chemical composition of the films. The se nsitivity factors were calculated assuming that the solid solution (CdTe)(1 -x)(In2Te3)(x) was formed. For samples of low In concentration, the lattice parameter decreased linearly with the molar percent of In2Te3 in CdTe. Thi s behavior corroborated the presence of the solid solution. (C) 2000 Americ an Vacuum Society. [S0734-2101(00)01902-3].