Growth of GaNAs by molecular beam expitaxy using a N-2/Ar rf plasma

A high efficiency nitrogen rf plasma source has been used to grow GaNAs by diluting the N-2 gas with Ar. This source (an EPI UniBulb(TM) source) was o riginally designed for use in the growth of pure nitrides at high growth ra tes. For growth of As-rich GaNAs, high concentrations of active nitrogen le ad to the growth of GaN instead of a random alloy. In this work we demonstr ate that a dilute N-2/Ar mixture leads to GaNAs films where the amount of n itrogen incorporation varies directly with the percentage of NL in the gas mixture. Films with high structural quality were grown, thus validating the use of this approach. (C) 2000 American Vacuum Society. [S0734-2101(00)064 02-2].