Dynamic simulations of pulsed reactive sputtering processes

In the reactive sputtering process numerous parameters interact in a comple x and nonlinear way. Thus, if any parameter is changed during operation, it is not an easy matter to predict the response of the other involved parame ters. The static behavior of the reactive sputtering process has previously been carefully investigated. However, studies of the time dependent behavi or of this process are rare. It is important to study the dynamic behavior to gain a more complete understanding of the process. Furthermore, the incr eased use of pulsed power sources has set focus on the process dynamics. A model describing the time-dependent behavior of the pulsed reactive sputter ing process is proposed in this work. The model suggests that the time to r each process equilibrium may vary substantially depending on the process hi story. This memory effect has been experimentally verified. Finally, the si mulations clearly point out that for high repetition frequencies (>1 kHz) o f the pulsed direct current (dc) reactive sputtering process there will be no time-dependent variations of the chemical compositions either at the tar get surface or at the growing film at the substrates. At these high frequen cies the chemistry of the process will act identical as to the continuous d e reactive sputtering process having the average pulsed de power supplied t o the target. (C) 2000 American Vacuum Society. [S0734-2101(00)00602-3].