Investigation of persistent photoconductivity in a Ge-doped ZnSe epilayer

Authors
Zhang, L Dai, N Hu, GJ Chen, LY Tamargo, MC
Citation
L. Zhang et al., Investigation of persistent photoconductivity in a Ge-doped ZnSe epilayer, J VAC SCI A, 18(2), 2000, pp. 560-562
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
18
Issue
2
Year of publication
2000
Pages
560 - 562
Database
ISI
SICI code
0734-2101(200003/04)18:2<560:IOPPIA>2.0.ZU;2-4
Abstract
A persistent photoconductivity (PPC) measurement was made on Ge-doped ZnSe using contact electrodes. It is shown that Ge in ZnSe forms deep levels res ponsible for the observed PPC effect at a quenching temperature of 210 K. T he photogenerated carriers move freely in the ZnSe:Ge epilayer but are conf ined in the region exposed to light, indicating that it is possible to writ e an erasable metallic pattern on the epilayer. (C) 2000 American Vacuum So ciety. [S0734-2101(00)01302-6].