Progress on optimization of p-type GaAs/AlGaAs quantum well infrared photodetectors

Authors
Shen, A Liu, HC Buchanan, M Gao, M Szmulowicz, F Brown, GJ Ehret, J
Citation
A. Shen et al., Progress on optimization of p-type GaAs/AlGaAs quantum well infrared photodetectors, J VAC SCI A, 18(2), 2000, pp. 601-604
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
18
Issue
2
Year of publication
2000
Pages
601 - 604
Database
ISI
SICI code
0734-2101(200003/04)18:2<601:POOOPG>2.0.ZU;2-T
Abstract
We report the optimization of barrier thickness and well doping density for GaAs/AlGaAs p-type quantum well infrared photodetectors covering the 3-5 m u m wavelength region. We investigated a series of samples with barrier wid ths varying from 10 to 50 nm and found that the optimum barrier thickness i s about 20 nm. For devices operating at about 100 K, the optimum two-dimens ional doping density is found to be in the range 1-2x10(12)cm(-2), which ma ximizes the background limited infrared performance temperature and dark cu rrent limited detectivity. (C) 2000 American Vacuum Society. [S0734-2101(00 )02802-5].