Ultrafast silicon based photodetectors

We have fabricated different metal-silicon-metal photodetectors and charact erized these devices for visible and near-infrared (IR) response. For wavel engths shorter than 1.1 mu m. electron-hole pairs are generated in the Si. They are accelerated to saturation velocity and move towards the metal elec trodes. For longer wavelengths, Si itself becomes transparent, but carriers are emitted from the internal semiconductor-metal interfaces. This so-call ed "internal photoeffect" is governed by different carrier dynamics, becaus e "hot" electrons or holes are injected into the Si. Their significant exce ss energy leads to extremely fast electrical pulses. The resulting temporal response was measured with a new setup, using a Ti:sapphire laser and an o ptical parametric oscillator. which generates ultrafast optical pulses (170 fs) at IR wavelengths. Schottky-barrier emission from CoSi2, Cr, Ti, and P t was investigated. A photodetector from Ti-Si-CoSi2 was excited with optic al pulses of 1250 nm and showed an electrical pulse response of 3.2 ps full width at half maximum at 4 V bias. This is a record value. We can demonstr ate, that under certain conditions an even faster response becomes possible . (C) 2000 American Vacuum Society. [S0734-2101(00)04702-3].