X-ray phosphor deposition technology for co-integration with amorphous silicon imaging arrays

Citation
Zh. Gu et al., X-ray phosphor deposition technology for co-integration with amorphous silicon imaging arrays, J VAC SCI A, 18(2), 2000, pp. 639-642
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
18
Issue
2
Year of publication
2000
Pages
639 - 642
Database
ISI
SICI code
0734-2101(200003/04)18:2<639:XPDTFC>2.0.ZU;2-J
Abstract
X-ray phosphor films based on composite materials, for conversion of x rays into visible light, have been synthesized for large area imaging applicati ons. Here the major components are gadolinium oxysulfide doped with terbium (Gd2O2S:Tb), polyvinyl alcohol and water. A small amount of additives (eth ylene glycol and sulfonated type agents) were incorporated to disintegrate aggregated phosphor powders and to minimize coating defects. The films, wit h thicknesses ranging from 380 to 1100 mu m and phosphor grain size of 10 m u m, were deposited onto glass substrates. The coating quality of the films was evaluated via confocal laser beam scanning microscopy. The x-ray absor ption efficiency and the green light emission intensity of the films were m easured as functions of film thickness and x-ray source voltage. (C) 2000 A merican Vacuum Society. [S0734-2101(00)03702-7].