Gs. Chen et al., Evaluation of single- and multilayered amorphous tantalum nitride thin films as diffusion barriers in copper metallization, J VAC SCI A, 18(2), 2000, pp. 720-723
This study evaluates 40-nm-thick amorphous Ta2N (n-Ta2N) thin films with va
rious compositions and metallurgical designs as diffusion barriers for copp
er metallization, Results based on sheet resistance measurements, x-ray dif
fraction analyses, and transmission and scanning electron microscopies cons
istently follow a sequence of coarsening copper grains, transforming a-Ta2N
into a crystalline phase, and finally forming {111}-faceted pyramid Cu3Si
precipitates and TaSi2. The degradation of the single-layered stoichiometri
c Ta2N (a-Ta67N33) barriers is primarily triggered by a premature crystalli
zation of the amorphous barrier layers at temperatures as low as 450 degree
s C. However, as adequately designed double-layered (20 nm Ta67N33/20 nm Ta
62N38) amorphous barriers can be subjected to high-temperature annealing wi
thout crystallization, the effectiveness of the double-layered barriers can
be significantly improved, elevating the degradation temperature by approx
imately 100 degrees C. (C) 2000 American Vacuum Society. [S0734-2101(00)046
02-9].