An airbridge technique was developed and subsequently employed to fabricate
mesoscopic devices, such as parallel quantum point contacts. The airbridge
technique mainly involves two different electron sensitive polymers, polym
ethylglutarimide and polymethyl methacrylate. The airbridge was patterned b
y electron beam lithography and metal lift-off with bilayer resist. Conduct
ance measurements were performed on the devices at low magnetic fields. The
results confirmed both the presence of the elliptical antidot as a negativ
e voltage was applied to the center gate, as well as the nonintrusive natur
e of the airbridge technique. [S073P2101(00)02502-1].