Bistable microelectrothermal actuator in a standard complementary metal-oxide-semiconductor process

Citation
Ic. Ressejac et al., Bistable microelectrothermal actuator in a standard complementary metal-oxide-semiconductor process, J VAC SCI A, 18(2), 2000, pp. 746-749
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
18
Issue
2
Year of publication
2000
Pages
746 - 749
Database
ISI
SICI code
0734-2101(200003/04)18:2<746:BMAIAS>2.0.ZU;2-5
Abstract
A new kind of bistable microelectrothermal actuator is designed and fabrica ted in a standard complementary metal-oxide-semiconductor technology. This actuator is designed to be the basic element of an N by N switching matrix that enables the connection of an input signal among N outputs. A microelec tronic addressing circuit integrated on the same substrate can control this matrix. Bulk micromachining processes release SiO2 and Al cantilever beams , each having two bilayer actuators. When the Al is resistance heated, stre sses are generated leading to deflections of the cantilever. By proper sequ encing of heating and cooling of the heaters, complex motion of the beam is possible, including two stable positions. A combination of anisotropic and isotropic etching techniques using tetramethyl ammonium hydroxide and XeF2 are used to realize these structures. (C) 2000 American Vacuum Society. [S 0734-2101(00)03802-1].