Citation
N. Boyer et al., Temperature distribution over a GaAs heterojunction bipolar transistor measured by fluorescent microthermal imaging, J VAC SCI A, 18(2), 2000, pp. 754-756
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101
→ ACNP
Volume
18
Issue
2
Year of publication
2000
Pages
754 - 756
Database
ISI
SICI code
0734-2101(200003/04)18:2<754:TDOAGH>2.0.ZU;2-D
Abstract
Fluorescent microthermal imaging (FMI) is used to measure the temperature a
t the surface of a 2 x 2 mu m(2) heterojunction bipolar transistor. The pre
sence of an artifact at the emitter post indicates that accurate temperatur
e measurements are limited to hat surfaces. The FMI measurements obtained f
or various power dissipations are compared with electrical measurements of
the junction temperature. The good agreement between the two techniques sug
gests that the temperature drop along the emitter post of the device is wit
hin a few degrees. (C) 2000 American Vacuum Society. [S0734-2101(00)06702-6
].