Direct extraction of the channel thermal noise in metal-oxide-semiconductor field effect transistor from measurements of their rf noise parameters

This article presents an extraction method to obtain the channel thermal no ise in metal-oxide-semiconductor field effect transistor (MOSFETs) directly from the de, scattering parameter and rf noise measurements. In this extra ction method, the transconductance (g(m)), output resistance (R-DS), and so urce and drain resistances (R-S and R-D) are obtained from de measurements. The gate resistance (R-G) is extracted from scattering-parameter measureme nts, and the equivalent noise resistance (R-n) is obtained from rf noise me asurements. This method has been verified by using the measured data of a 0 .36 mu m n-type MOSFET up to 18 GHz. Comparisons between simulated and meas ured characteristics of noise parameters versus frequency are also presente d. (C) 2000 American Vacuum Society. [S0734-2101(00)07102-5].