Ch. Chen et Mj. Deen, Direct extraction of the channel thermal noise in metal-oxide-semiconductor field effect transistor from measurements of their rf noise parameters, J VAC SCI A, 18(2), 2000, pp. 757-760
This article presents an extraction method to obtain the channel thermal no
ise in metal-oxide-semiconductor field effect transistor (MOSFETs) directly
from the de, scattering parameter and rf noise measurements. In this extra
ction method, the transconductance (g(m)), output resistance (R-DS), and so
urce and drain resistances (R-S and R-D) are obtained from de measurements.
The gate resistance (R-G) is extracted from scattering-parameter measureme
nts, and the equivalent noise resistance (R-n) is obtained from rf noise me
asurements. This method has been verified by using the measured data of a 0
.36 mu m n-type MOSFET up to 18 GHz. Comparisons between simulated and meas
ured characteristics of noise parameters versus frequency are also presente
d. (C) 2000 American Vacuum Society. [S0734-2101(00)07102-5].