Excitonic electroabsorption spectra in semiconductor epilayers and heterost
ructures have spectral structure that contributes to modulator performance
in broad-band applications such as femtosecond pulse manipulation. We defin
e several electro-optic sum rules and electroabsorption moments combined in
to figures-of-merit that describe field sensitivities, bandwidths and signa
l-bandwidth products for semi-insulating GaAs heterostructures and AlGaAs/G
aAs multiple quantum wells. The quantum-confined Stark effect and Franz-Kel
dysh field ionization are treated on an equal basis in the analysis. Franz-
Keldysh field broadening produces larger electroabsorption than the quantum
-confined Stark effect in quantum wells for electric fields smaller than 40
kV/cm. (C) 2000 Elsevier Science B.V. All rights reserved.