Long-wavelength EDFA gain enhancement through 1550 nm band signal injection

Citation
Ma. Mahdi et al., Long-wavelength EDFA gain enhancement through 1550 nm band signal injection, OPT COMMUN, 176(1-3), 2000, pp. 125-129
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
OPTICS COMMUNICATIONS
ISSN journal
00304018 → ACNP
Volume
176
Issue
1-3
Year of publication
2000
Pages
125 - 129
Database
ISI
SICI code
0030-4018(20000315)176:1-3<125:LEGET1>2.0.ZU;2-3
Abstract
An experiment on gain enhancement in the long band (L-band) is demonstrated . Gain at the L-band is relatively inefficient because the operating wavele ngths are far from the peak emission band of erbium ions. Gain enhancement for the L-band is achieved by using a signal from the conventional band (C- band). The efficiency of gain enhancement is strongly determined by the abs orption coefficient of the C-band signal. Gain enhancement as high as 5.3 d B is obtained at - 15 dBm of 1535 nm injected signal. Maximum gain enhancem ent for other injected signal wavelengths can be optimised by varying their power. Noise figure penalty is measured to be less than 1.0 dB at its opti mised power. Furthermore, there is no penalty on the noise figure for injec ted signals longer than 1545 nm. (C) 2000 Elsevier Science B.V. All rights reserved.