Switching powers for optical bistability in a semiconductor laser above and below threshold

We present the first measurements of optical switching power for dispersive bistability in a semiconductor laser as a function of current both below a nd above threshold. The minimum power for switch-up occurs just below thres hold and the minimum power for switch-down occurs slightly above threshold. These results are in good agreement with predictions from an established t heoretical model for semiconductor optical amplifiers which has been extend ed to apply above threshold by accounting for spontaneous emission. (C) 200 0 Elsevier Science B.V. All rights reserved.