Room-temperature magnetoresistive sensor based on thick films manganese perovskite

La2/3Sr1/3MnO3 perovskite, having the ferromagnetic transition above room-t emperature, is a good candidate to be used as a magnetoresistive sensor. Th e fabrication of La2/3Sr1/3MnO3 thick films on Al2O3 and ZrO2 substrates, b y screen printing technique, is reported. The synthesis conditions to optim ize the room-temperature magnetoresistive response and mechanical durabilit y have been explored. It is shown that under appropriate conditions, materi als having field sensitivity high enough for some applications at room-temp erature can be obtained. A magnetoresistive device has been developed in or der to show the potentiality of this material as a low-cost magnetic sensor . (C) 2000 Elsevier Science S.A. All rights reserved.