Series resistance limits for 0.05 mu m MOSFETs

Technology scaling demands shallower junctions for MOSFETs, making high-con ductivity access to the intrinsic device harder to achieve. Considerable ef fort has been devoted to improving process technology in order to reduce th e sheet resistivity of shallow implanted layers. However, a calculation of the components of resistance las a function of technology node suggests tha t sheet resistance is unlikely to be a limiting factor in scaled MOSFETs. C ontact and link-up resistance neighboring the channel will play an increasi ngly important part in driving junction technology. (C) 2000 Academic Press .