Monte Carlo simulation for ultra-sound MOS devices

This paper discusses advanced needs of Monte Carlo simulation approaches fo r MOS silicon devices scaled below 0.1 mu m channel length. For predictive simulation over a wide range of biases, it is necessary to provide the Mont e Carlo procedure with tuning capabilities to adjust the mobility through c alibration of the interface roughness scattering. This is accomplished by i ntroducing a semi-empirical procedure with a-physical elastic scattering ra te and an inelastic rate with tunable strength. To-resolve the role of hot carriers in relation to oxide interface damage, it is also important to rea lize fully bipolar MOS simulation, so that one can analyze the transport of impact-ionization generated carriers and secondary ionization. As the devi ces become quite small, three-dimensional simulation can be:not only feasib le, but also necessary to resolve the granularity-of doping profiles and th e complete carrier-carrier and carrier-ion interactions. Issues of device M onte Carlo implementation on parallel environments are discussed, and a pra ctical,approach for resolving the short-range forces of the charge-charge i nteraction in three dimensionals is described. Several examples and prelimi nary results are presented to-illustrate the various issues. (C) 2000 Acade mic Press.