Hydrogen and hot electron defect creation at the Si(100)/SiO2 interface ofmetal-oxide-semiconductor field effect transistors

We explore the hydrogen-related microstructures involved in,hot electron de fect creation at the Si(100)-SiO2 interface of metal-oxide semiconductor: h eld effect transistors. With ab initio density functional calculations, the energetics and defect levels have been calculated for hydrogen in bulk sil icon, bulk silicon dioxide and at their, interface. We relate these calcula tions to several experiments and suggest a microscopic model for hydrogen-r elated hot electron degradation. (C) 2000 Academic Press.