Raman study of titanium oxide layers produced with plasma immersion ion implantation

Raman spectroscopy was used to study thin titanium oxide (TiO2)layers obtai ned by oxygen plasma immersion ion implantation (PIII) at rather low temper atures between 265 and 550 degrees C. A pulse voltage of -30 kV and differe nt pulse numbers between 5 x 10(5) and 4 x 10(6) were used. The phase compo sition was investigated with Raman spectroscopy, showing that rutile is pre sent for all temperatures and doses used in this investigation. The results were corroborated with glancing angle X-ray diffraction (XRD). The grain s ize, as determined by scanning electron microscopy (SEM), changed from 40-1 00 to 10-30 nm when the temperature was decreased from 430 to 380 degrees C . The retained dose and the layer thickness were determined by elastic reco il detection (ERD), yielding an incident dose of 6 x 10(11) oxygen atoms pe r pulse and a maximum layer thickness beyond 100 nm. (C) 2000 Elsevier Scie nce S.A. All rights reserved.