Physical properties of carbon nitride films synthesized using atomic transport reactions

Inductively coupled plasma chemical vapour deposition (ICP-CVD) has been us ed for the preparing of thin CN, films from a solid carbon source (at float ing potential) and a nitrogen plasma. Volatile CN species generated via ato mic transport reactions are the film forming particles. The deposited layer s have a rather smooth surface, their deposition rate and thickness, respec tively, depend on the substrate position due to a gradient in the precursor species concentration. The nitrogen fraction is at about 50% and exhibits almost no dependence on the deposition parameters. Emphasis was placed on a detailed study of the bonding structure by different analytical techniques . Based on these investigations, a probable structure of the CNx films is p roposed. Since no identification of tetragonally bonded carbon atoms was fo und, it is supposed that the bonding network is composed of imine-like unit s and only to a small part of nitrile-type elements. The films are insulati ng with resistivity of up to 10(11) Omega cm. (C) 2000 Elsevier Science S.A . All rights reserved.