Cr and Ti films on C/C-SiC substrates were obtained by ion assisted electro
n beam physical vapour deposition (IA EBPVD) and EBPVD, interrupting the de
position process and annealing the substrates. The morphology and propertie
s of the films were studied using optical microscopy, scanning electron mic
roscopy and X-ray diffraction (XRD) methods. Ion bombardment of the surface
during the metal deposition has an influence on the structure of the grown
films: by increasing the ion energy from 200 V to 700 V, the grain sizes a
re more uniform. X-ray investigations show that residual silicon has an inf
luence on the initial stage of chromium deposition. XRD was also used for m
easurement of the residual stresses, which depend on the ion energy. (C) 20
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