Microstructural study of residual stress in chemically vapor deposited beta-SiC

Silicon carbide was chemically vapor deposited (CVD) on isotropic pyrolytic graphite substrates by using methyltrichlorosilane as the source gas and h ydrogen as the carrier gas. Transmission electron microscopy was used to ob serve microstructural defects in CVD beta-SiC caused by residual stresses. Microstructures resulting from recovery and annealing effects during the de position processes were also observed and are discussed. The magnitude of r esidual stress between deposition temperatures of 1400 and 1600 degrees C d ecreased from about 2000 to about 250 MPa, estimated by che wafer central d eflection method. (C) 2000 Elsevier Science S.A. All rights reserved.