Restructuring process of the Si(111) surface upon Ca deposition

Citation
Aa. Saranin et al., Restructuring process of the Si(111) surface upon Ca deposition, SURF SCI, 448(2-3), 2000, pp. 87-92
Citations number
25
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
448
Issue
2-3
Year of publication
2000
Pages
87 - 92
Database
ISI
SICI code
0039-6028(20000310)448:2-3<87:RPOTSS>2.0.ZU;2-L
Abstract
Using scanning tunneling microscopy and high-resolution spot profile analys is low-energy electron diffraction (SPA-LEED), the process of Si(111)3 x 1- Ca phase formation induced by Ca adsorption on Si(111)7 x 7 samples has bee n studied. Our observation revealed that what has been considered to be 3 x 1 reconstruction is actually a mixture of 3 x 2 and c(6 x 2) reconstructio ns. The redistribution of Si atoms in a top Si(111) layer has been found to play a critical role in the Si(111)3 x 2-Ca growth. From the quantitative consideration of Si mass transport balance, top Si atom density of Si(111)3 x 2-Ca phase has been determined to be a 4/3 monolayer. (C) 2000 Elsevier Science B.V. All rights reserved.